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This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.

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Interconnect challenges for 2D and 3D Integration.- Overview of Carbon Nanotube Physical Properties.- Overview of Carbon Nanotube Processing Methods.- Electrical Conductivity of Carbon Nanotubes - Modeling and Characterization.- Computational Studies of Thermal Transport Properties of Carbon Nanotube Material.- Overview of Carbon Nanotubes for Horizontal On-Chip Interconnects.- Carbon Nanotubes as Vertical Interconnects for 3D ICs.- Carbon Nanotubes as Micro-Bumps for 3D Integration.- Electrothermal Modeling of Carbon Nanotubes TSVs.- Exploring Carbon Nanotubes for 3D Power Delivery Networks.- Carbon Nanotubes for Monolithic 3D ICs.

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"It can be served as a single-source reference on carbon nanotubes (CNTs) for interconnects applications. ... a valuable addition to a scientific library, as well as served as good introduction for CNTs in 3D IC integrations for semiconductor packaging engineers or specialists and industrials involved in the field of CNTs materials. This book is highly recommended for people who desire a better understanding of the theory and practice of CNTs and technical considerations in 3D IC integration and device reliability." (Chong Leong Gan, Microelectronics Reliability, January, 2017)

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Aida Todri-Sanial is a research scientist at the French National Center for Scientific Research (CNRS) attached to Laboratoire of Informatique, Robotique, Microelectronics of Montpellier (LIRMM) in junction with University of Montpellier 2, France. She is also a permanent faculty member in the Microelectronics department at LIRMM. She received her Ph.D. in Electrical & Computer Engineering at the University of California Santa Barbara, USA in 2009. She received the B.S. and M.S. degrees from Bradley University, IL, USA and California State University at Long Beach, CA, USA in 2001 and 2003, respectively. From August 2009 to September 2010, she was with the Computing Division at Fermilab, IL, USA where she was the recipient of John Bardeen Fellowship Award. Previously, she has held several summer and visiting research positions: STMicroelectronics, FR (2008), IBM TJ Watson Research Center, Yoktown, NY, USA (2006, 2007), Mentor Graphics Corporation, CA, USA (2005), and Cadence Design Systems, CA, USA (2002-2004).

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