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Muhammad Mustafa Hussain

Advanced Nanoelectronics


Post-Silicon Materials and Devices
Herausgegeben von Hussain, Muhammad Mustafa
1. Auflage. 2018. 288 S. 100 SW-Abb., 50 Farbabb. 244 mm
Verlag/Jahr: WILEY-VCH 2018
ISBN: 3-527-34358-X (352734358X)
Neue ISBN: 978-3-527-34358-4 (9783527343584)

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High-k/Metal Gate Planar and Non-Planar Silicon CMOS
Alternative Channel materials: SiGe, III-V Semiconductors
1D Materials: Carbon Nanotubes, Nanowires
2D Materials: Graphene, Dichalcogenides
Tunnel FET
Negative Capacitance FET
THz Electronics
NEM FET
Mott FET
Ferroelectric FET
Piezotronic Transistors
Spin FET
BisFET
Dr. Muhammad Mustafa Hussain is Associate Professor in the Electrical Engineering program of King Abdullah University of Science and Technology (KAUST), Saudi Arabia. Before joining KAUST, he was Program Manager of Emerging Technology Program in SEMATECH, Austin. His program was funded by DARPA NEMS, CERA and STEEP programs. He and his students have received 35 research awards including IEEE Region 5 Outstanding Individual Achievement Award 2016, TEDx 2017, Outstanding Young Texas Exes Award 2015 (UT Austin Alumni Award), US National Academies Arab-American Frontiers of Sensors 2015, DOW Chemical Sustainability Challenge Award 2012. His research has been highlighted extensively in international media like in Washington Post, Wall Street Journal (WSJ), IEEE Spectrum. His research interest is to expanding the horizon of CMOS electronics and technology for future applications.