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Halbleiter-Leistungsbauelemente sind das Kernstück der Leistungselektronik. Sie bestimmen die Leistungsfähigkeit und machen neuartige und verlustarme Schaltungen erst möglich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie über einzelne Bauelemente bis zu thermomechanischen Problemen, Zerstörungsmechanismen und Störungseffekten. Die 2., überarbeitete Auflage berücksichtigt technische Neuerungen und Entwicklungen.

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Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn-Junctions.- Short Introduction to Power Device Technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device-Induced Oscillations and Electromagnetic Disturbances.- Power Electronic System Integration.

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Josef Lutz studied Physics at the University of Stuttgart. He invented the Controlled Axial Lifetime (CAL) diode and holds several patents. In 1999 he graduated as Ph.D in electrical engineering at the University of Ilmenau. Since August 2001 he is a Professor for Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany. He is the consulting Director of the PCIM, member of four international Program Committees and member of the Editorial Advisory Board of Microelectronics Reliability. He was awarded with the degree of Honorable Professor by the North Caucasus State University Stavropol, Russia, in 2005.

Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster. In 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt which in 1988 passes to Daimler-Benz. Working on the physics underlying the operation modes of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analysing device operation, he finds an important participation of excitons even near room temperature. To improve the dynamic behaviour of rectifier diodes he invented the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the TU Darmstadt, Germany.

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