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Revision with unchanged content. In pursuit of a novel generation of devices, exploration of spin properties of the particles is needed. Spintronics is a modern field in physics which exploits spin properties to be used in addition to the charge degree of freedom. Since the conductivity mismatch problem presents a fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semi con ductor, other means for injecting spin-polarized carriers must be used. With a tunnel contact, it is possible to achieve a highly spin-polarized room-tempera ture tunnel injection. Here we describe a novel approach of applying mag netic resonant tunneling diodes for spin manipulation. In this work, growth and properties of all-II-VI magnetic resonant tunneling diodes, as applied to spintronics, are reported.

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Is working in the field of semiconductor technology over 10 years. Multiple high profile publications in per review journals reflect both the level and quality of scientific research conducted by the author.

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