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Toshikazu Nishida, Yongke Sun, Scott E. Thompson
(Beteiligte)
Strain Effect in Semiconductors
Theory and Device Applications
2010. 2014. xii, 350 S. 235 mm
Verlag/Jahr: SPRINGER, BERLIN; SPRINGER US; SPRINGER 2014
ISBN: 1-489-98315-5 (1489983155)
Neue ISBN: 978-1-489-98315-2 (9781489983152)
Preis und Lieferzeit: Bitte klicken
This text presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers.
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Overview: The Age of Strained Devices.- PART I Band Structures of Strain Semiconductors.- Stress, Strain, Piezoresistivity and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low Dimensional Semiconductor Structures.- PART II Transport Theory of Strained Semiconductors.- Semiconductor Transport.- PART III Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.- A Effective Mass Theorem.- References.- Index.