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Nitingiri N. Gosai

Electrical & dielectrical properties of pure and copper doped SnSe


2015. 124 S. 220 mm
Verlag/Jahr: SCHOLAR´S PRESS 2015
ISBN: 3-639-76988-0 (3639769880)
Neue ISBN: 978-3-639-76988-3 (9783639769883)

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Energy deficiency is most serious problem of the world and practical use as well as role of semiconducting materials in photovoltaic technology is discussed. How all properties of as grown semiconductor can be alter in such way to achieve optimum solar cell efficiency, is also analyzed. General bottom up and top down approach for synthesis of semiconducting nanoparticles is given in detail. Electrical and Dielectric characterization of as synthesized Tin Selenide nanoparticles is presented. Electrical and Dielectric properties changes as a function of synthesis temperature of pure Tin Selenide and doping level of copper concentration also. Such properties is studied when materials dimensions are reduces to nanometer is also explained with the help of theoretical physics. Energy of activation for pure and copper doped SnSe semiconducting nanoparticles is explained with the help of mathematics and concepts of physics behind that mathematics. How and why size of nanoparticles plays important role in altering the properties of material is also discussed in depth.
Dr Nitingiri N Gosai is working as Asst Prof in Physics, MVM Science & H. Science College Rajkot,Gujarat, India. During his research he published more than 32 International reputed Journal research paper, he is also reviewer in 2 International reputed Journal. He is member of many physics society. He had total more than 7 years teaching experience